VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors

Description : IGBT MOD 1200V 139A 658W SOT227

Category : Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules

Current - Collector (Ic) (Max) : 139 A

Product Status : Active

Mounting Type : Chassis Mount

Package : Bulk

Series : HEXFRED®

Package / Case : SOT-227-4, miniBLOC

Vce(on) (Max) @ Vge, Ic : 2.55V @ 15V, 80A

Voltage - Collector Emitter Breakdown (Max) : 1200 V

Supplier Device Package : SOT-227

Mfr : Vishay General Semiconductor - Diodes Division

Operating Temperature : -40°C ~ 150°C (TJ)

Current - Collector Cutoff (Max) : 100 µA

IGBT Type : Trench

Power - Max : 658 W

Input : Standard

Input Capacitance (Cies) @ Vce : 4.4 nF @ 25 V

Configuration : Single

NTC Thermistor : No

Base Product Number : GT80